Goford Semiconductor

Since the foundation in 1995, Goford Semiconductor has been developing into a global company with offices in the USA, Australia, Shenzhen, Jiangsu, and Hong Kong. We have been always devoting in the R&D and sales of the power Mosfet products. We focus on the energy efficiency, mobility, and reliability to provide cost effective products to the market. We are committed to trying our best to satisfy customers’ needs, provide the most reliable and cost effective products, innovate and do better every day, partner with engineers and customers for mutual value, and work harder to realize our commitment.

Part Number	Description	View
G20P06K	P-60V, -20A,RD<45M@-10V,VTH-2V~-	Inquiry
G75P04FI	P-40V,-60A,RD(MAX)<7M@-10V,VTH-1	Inquiry
G20P10KE	P-CH, -100V, 20A, RD(MAX)<116M@-	Inquiry
G110N06T	N60V,RD(MAX)<6.4M@10V,RD(MAX)<8.	Inquiry
G2K2P10SE	P-100V, 3.5A,RD<200M@-10V,VTH1V~	Inquiry
G65P06T	P-60V,RD(MAX)<18M@-10V,VTH-2.0V~	Inquiry
G06NP06S2	N/P60V,RD(MAX)<35M@10V,RD(MAX)<4	Inquiry
G12P03D3	P30V,RD(MAX)<20M@-10V,RD(MAX)<26	Inquiry
G7P03S	P30V,RD(MAX)<22M@-10V,RD(MAX)<33	Inquiry
G06N02H	N20V, 6A, RD<14.3M@4.5V,VTH0.5V~	Inquiry
GT080N10T	N100V, 70A,RD<8M@10V,VTH1.0V~3.0	Inquiry
GT023N10M	N100V,140A,RD<2.7M@10V,VTH2.7V~4	Inquiry
6706A	N/P30V,6.5A/-5A,RD(MAX)<20M/45M@	Inquiry
1216D2	P-12V,-16A,RD(MAX)<21M@-4.5V,VTH	Inquiry
G50N03D5	N30V,RD(MAX)<4.5M@10V,RD(MAX)<8M	Inquiry
G06N06S	N60V,RD(MAX)<22M@10V,RD(MAX)<35M	Inquiry
G170P03S2	P-30V, -9A,RD<18M@-10V,VTH-1V~-2	Inquiry
GT090N06S	N60V,14A,RD<8M@10V,VTH1.0V~2.4V,	Inquiry
G700P06T	P-60V,25A,RD<70M@-10V,VTH1V~-2.5	Inquiry
G075N06MI	N60V, 110A,RD<7M@10V,VTH1.0V~4.0	Inquiry
G1K1P06LL	P-60V,-4A,RD(MAX)<110M@-10V,VTH-	Inquiry
18N20J	N200V, 18A,RD<0.16@10V,VTH1V~3V,	Inquiry
630A	N200V,RD(MAX)<280M@10V,VTH1V~3V,	Inquiry
G40P03K	P-30V,RD(MAX)<9.5M@-10V,RD(MAX)<	Inquiry
G400P06T	P-60V,-32A,RD(MAX)<40M@-10V,VTH-	Inquiry
G2K2P10S2E	P-100V,ESD,-3.5A,RD(MAX)<200M@-1	Inquiry
G35P04D5	P-40V,-35A,RD(MAX)<20M@-4.5V,VTH	Inquiry
G13P04S	P-40V,-13A,RD(MAX)<15M@-10V,VTH-	Inquiry
G09N06S2	N+N 60V,9A,RD<18M@10V,VTH1.2V~2.	Inquiry
G9435S	P-30V,-5.1A,RD(MAX)<55M@-10V,VTH	Inquiry
GT007N04TL	N40V,150A,RD<1.5M@10V,VTH1.0V~2.	Inquiry
GT100N12D5	N120V,RD(MAX)<10M@10V,VTH2.5V~3.	Inquiry
G130N06S	MOSFET, N-CH,60V,9A,RD(MAX)<12M@	Inquiry
GC20N65T	N650V,RD(MAX)<170M@10V,VTH2.5V~4	Inquiry
GT060N04T	MOSFET, N-CH, 40V,60A,TO-220	Inquiry
G16P03S	P30V,RD(MAX)<12M@-10V,RD(MAX)<18	Inquiry
G800N06S2	N60V, 3A,RD<80M@10V,VTH0.7V~1.2V	Inquiry
GT095N10K	N100V, RD(MAX)<10.5M@10V,RD(MAX)	Inquiry
GT090N06K	MOSFET, N-CH, 60V,45A,TO-252	Inquiry
GT025N06AT	N60V, 170A,RD<2.5M@10V,VTH1.2V~2	Inquiry
G900P15M	P-150V,-60A,RD(MAX)<80M@-10V,VTH	Inquiry
G75P04K	P40V,RD(MAX)<10M@-10V,VTH-1.2V~-	Inquiry
G6P06	P60V,RD(MAX)<96M@-10V,RD(MAX)<14	Inquiry
G12P10TE	P-100V,-12A,RD(MAX)<200M@-10V,VT	Inquiry
G12P04K	P40V,RD(MAX)<35M@-10V,RD(MAX)<45	Inquiry
G20N06D52	N60V,RD(MAX)<30M@10V,RD(MAX)<40M	Inquiry
G58N06K	N60V,58A,RD<13M@10V,VTH1.0V~2.5V	Inquiry
G70P02K	P15V,RD(MAX)<8.5M@-4.5V,RD(MAX)<	Inquiry
G48N03D3	N30V,RD(MAX)<6M@10V,RD(MAX)<8M@4	Inquiry
GT025N06AM	N60V,170A,RD<2.5M@10V,VTH1.2V~2.	Inquiry

Total 308s items

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