WeEn Semiconductors Co., Ltd
- WeEn Semiconductors Co., Ltd, is the global joint venture between NXP Semiconductors N.V. and Beijing JianGuang Asset Management Co. Ltd (JAC Capital). WeEn Semiconductors was officially opened on 19th January, 2016 with the business and operations center located in Shanghai, China. WeEn Semiconductors is registered at Nanchang city which is the capital city of Jiangxi province, China. It fully owns subsidiaries and branches in Jilin city for bipolar production, in Shanghai and the United Kingdom for R&D and production support, in Hong Kong for Sales activities, and in many other countries for sales and customer services, respectively.
As a key player in the semiconductors industry, WeEn combines the advanced bipolar power technology and the strong resource of JAC Capital in Chinese manufacturing industry and distribution channels, to focus on developing a complete portfolio of industry-leading bipolar power products including silicon controlled rectifiers, power diodes, high voltage transistors, silicon carbide which are widely used in the automotive, telecommunications, computers and consumer electronics, intelligent home appliances, lighting, and power management markets. The aim is to help the customers achieve higher cost-efficiency and production efficiency and to contribute to the development of China and global intelligent manufacturing.
The NXP Bi-Polar Division product portfolio (Diodes, Thyristors & Transistors) has been transferred to WeEn Semiconductors (Jan 19, 2017).
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WNSC2D16650CWQ |
DUAL SILICON CARBIDE SCHOTTKY DI |
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BTA312-600B,127 |
TRIAC 600V 12A TO220AB |
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Z0103MA0,116 |
TRIAC SENS GATE 600V 1A TO92-3 |
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BTA208X-600F,127 |
TRIAC 600V 8A TO220-3 |
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WNSC2D301200CW6Q |
WNSC2D301200CW/SOT429/STANDARD M |
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WNSC2D04650XQ |
DIODE SIL CARBIDE 650V 4A TO220F |
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BT138X-600,127 |
TRIAC 600V 12A TO220-3 |
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WNSC2D201200CWQ |
SILICON CARBIDE SCHOTTKY DIODE |
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BTA204S-800B,118 |
TRIAC 800V 4A DPAK |
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WND35P12BJ |
DIODE GEN PURP 1.2KV 35A D2PAK |
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BT139-600G0TQ |
BT139-600G0T/SIL3P/STANDARD MA |
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BYC30X-600PSQ |
DIODE GEN PURP 600V 30A TO220F |
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BT137B-800,118 |
TRIAC 800V 8A D2PAK |
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OT419Q |
OT419/SIL3P/STANDARD MARKING * |
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NXPSC106506Q |
DIODE SIL CARB 650V 10A TO220AC |
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NXPLQSC20650WQ |
DIODE SIL CARB 650V 20A TO247-3 |
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BTA2008-1000D/L0EP |
BTA2008-1000D/L01/TO-92/STANDA |
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BT152X-800R,127 |
SCR 800V 20A TO220-3 |
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BYV32EB-200,118 |
DIODE ARRAY GP 200V 20A D2PAK |
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BT139B-600E,118 |
TRIAC SENS GATE 600V 16A D2PAK |
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WNSC08650T6J |
DIODE SIL CARBIDE 650V 8A 5DFN |
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NXPSC10650XQ |
DIODE SIL CARB 650V 10A TO220F |
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BYV10D-600PJ |
BYV10D-600P/TO252/REEL 13" Q1/T |
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BYV34-500,127 |
DIODE ARRAY GP 500V 20A TO220AB |
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BUJ103AX,127 |
TRANS NPN 400V 4A TO220F |
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BT1308W-600D,115 |
TRIAC SENS GATE 600V 0.8A SC73 |
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BTA316B-600B,118 |
TRIAC 600V 16A D2PAK |
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BYV30X-600PQ |
DIODE GEN PURP 600V 30A TO220FP |
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BTA2008-1000D,126 |
BTA2008-1000D/TO-92/STANDARD M |
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BYV30-600PQ |
DIODE GEN PURP 600V 30A TO220AC |
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BT139X-600,127 |
TRIAC 600V 16A TO220-3 |
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BTA212X-600B,127 |
TRIAC 600V 12A TO220-3 |
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WNSC2D401200CWQ |
DUAL SILICON CARBIDE SCHOTTKY DI |
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BTA410-800CT,127 |
TRIAC 800V 10A TO220AB |
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BTA316B-600B0J |
TRIAC 600V 16A D2PAK |
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BYV29B-600PJ |
DIODE GEN PURP 600V 9A D2PAK |
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BYC8B-600,118 |
DIODE GEN PURP 500V 8A D2PAK |
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WNSC2D20650CJQ |
DUAL SILICON CARBIDE SCHOTTKY DI |
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OT418X |
OT418/SC-73/REEL 7" Q1/T1 *STA |
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ACTT8B-800C0J |
ACTT8B-800C0/D2PAK/REEL 13" Q1 |
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BTA212X-600F,127 |
TRIAC 600V 12A TO220F |
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BTA208-800B/DG,127 |
TRIAC 800V 8A TO220AB |
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BTA312X-800C/L01,1 |
TRIAC 800V 12A TO220F |
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BTA330X-800BTQ |
TRIAC 800V 30A TO220F |
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WNSC2D03650MBJ |
DIODE SIL CARBIDE 650V 3A SMB |
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BT139B-600,118 |
TRIAC 600V 16A D2PAK |
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ACTT12X-800CTQ |
ACTT12X-800CT/TO-220F/STANDARD |
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OT384,112 |
TRIAC TO92-3 |
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BT137X-600D,127 |
TRIAC SENS GATE 600V 8A TO220-3 |
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BT131-600D/L01EP |
TRIAC SENS GATE 600V 1A |
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