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GT30J121(Q)

Toshiba Semiconductor and Storage

  • GT30J121(Q) Image
    Image may be representation.See specifications for product details.

Product Overview

Part Number GT30J121(Q)
Manufacturer/Brand Toshiba Semiconductor and Storage
Product Description IGBT 600V 30A 170W TO3PN
Datasheets
RoHs Status
Stock Condition In Stock
Ship From Hong Kong
Shipment Way DHL/Fedex/TNT/UPS/EMS

In stock: 2 pcs

Reference Price(In US Dollars)
1
$1.623

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Specifications

  • Part NumberGT30J121(Q)
  • ManufacturerToshiba Semiconductor and Storage
  • DescriptionIGBT 600V 30A 170W TO3PN
  • Category49
  • Part Status2 pcs Stock
  • Input TypeStandard
  • Series-
  • categoriesDiscrete Semiconductor Products-->Transistors-->IGBTs-->Single IGBTs
  • Vce(on) (Max) @ Vge, Ic2.45V @ 15V, 30A
  • Current - Collector (Ic) (Max)30 A
  • Current - Collector Pulsed (Icm)60 A
  • Voltage - Collector Emitter Breakdown (Max)600 V
  • Test Condition300V, 30A, 24Ohm, 15V
  • Switching Energy1mJ (on), 800µJ (off)
  • Package / CaseTO-3P-3, SC-65-3
  • Mounting TypeThrough Hole
  • Base Product NumberGT30J121
  • PackageTube
  • Power - Max170 W
  • Supplier Device PackageTO-3P(N)
  • Product StatusActive
  • Td (on/off) @ 25°C90ns/300ns
  • IGBT Type-

After Sales

Returning

All returns should be made within 60 days of date of invoice and be accompanied by the original invoice number, certificate of guarantee card,
parts picture and a brief explanation or test report of the reason for the return. Returns will not be accepted after 60 days. Returned merchandise must be in original packaging and in resalable
condition. Parts returned due to customer error at time of quote or sale will not be accepted. Please contact customer service for a return authorization before return shipment.

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