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RN2905T5LFT

Toshiba Semiconductor and Storage

  • RN2905T5LFT Image
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Product Overview

Part Number RN2905T5LFT
Manufacturer/Brand Toshiba Semiconductor and Storage
Product Description TRANS 2PNP PREBIAS 0.2W US6
Datasheets RN2905T5LFT.pdf
RoHs Status
Stock Condition Out Stock
Ship From Hong Kong
Shipment Way DHL/Fedex/TNT/UPS/EMS

In stock: 0 pcs

Reference Price(In US Dollars)
1
$0.055

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Specifications

  • Part NumberRN2905T5LFT
  • ManufacturerToshiba Semiconductor and Storage
  • DescriptionTRANS 2PNP PREBIAS 0.2W US6
  • Category40
  • Part Status0 pcs Stock
  • Frequency - Transition200MHz
  • Part StatusDiscontinued at Digi-Key
  • Detailed DescriptionPre-Biased Bipolar Transistor (BJT) 2 PNP - Pre-Biased (Dual) 50V 100mA 200MHz 200mW Surface Mount US6
  • Series-
  • DC Current Gain (hFE) (Min) @ Ic, Vce80 @ 10mA, 5V
  • Resistor - Base (R1)2.2 kOhms
  • Resistor - Emitter Base (R2)47 kOhms
  • Current - Collector (Ic) (Max)100mA
  • Current - Collector Cutoff (Max)100nA (ICBO)
  • Voltage - Collector Emitter Breakdown (Max)50V
  • ManufacturerToshiba Semiconductor and Storage
  • Moisture Sensitivity Level (MSL)1 (Unlimited)
  • Standard Package1
  • Transistor Type2 PNP - Pre-Biased (Dual)
  • Lead Free Status / RoHS StatusLead free / RoHS Compliant
  • Package / Case6-TSSOP, SC-88, SOT-363
  • PackagingCut Tape (CT)
  • Mounting TypeSurface Mount
  • Power - Max200mW
  • Other NamesRN2905T5LFTCT
  • Supplier Device PackageUS6
  • Vce Saturation (Max) @ Ib, Ic300mV @ 250µA, 5mA

After Sales

Returning

All returns should be made within 60 days of date of invoice and be accompanied by the original invoice number, certificate of guarantee card,
parts picture and a brief explanation or test report of the reason for the return. Returns will not be accepted after 60 days. Returned merchandise must be in original packaging and in resalable
condition. Parts returned due to customer error at time of quote or sale will not be accepted. Please contact customer service for a return authorization before return shipment.

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