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TW048N65C,S1F

Toshiba Semiconductor and Storage

  • Image may be representation.See specifications for product details.

Product Overview

Part Number TW048N65C,S1F
Manufacturer/Brand Toshiba Semiconductor and Storage
Product Description G3 650V SIC-MOSFET TO-247 48MOH
Datasheets
RoHs Status
Stock Condition In Stock
Ship From Hong Kong
Shipment Way DHL/Fedex/TNT/UPS/EMS

In stock: 11 pcs

Reference Price(In US Dollars)
1
$11.267

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Specifications

  • Part NumberTW048N65C,S1F
  • ManufacturerToshiba Semiconductor and Storage
  • DescriptionG3 650V SIC-MOSFET TO-247 48MOH
  • Category46
  • Part Status11 pcs Stock
  • Drive Voltage (Max Rds On, Min Rds On)18V
  • Input Capacitance (Ciss) (Max) @ Vds1362 pF @ 400 V
  • Series-
  • categoriesDiscrete Semiconductor Products-->Transistors-->FETs, MOSFETs-->Single FETs, MOSFETs
  • Current - Continuous Drain (Id) @ 25°C40A (Tc)
  • Drain to Source Voltage (Vdss)650 V
  • Gate Charge (Qg) (Max) @ Vgs41 nC @ 18 V
  • TechnologySiCFET (Silicon Carbide)
  • Operating Temperature175°C
  • Package / CaseTO-247-3
  • Mounting TypeThrough Hole
  • PackageTube
  • Power Dissipation (Max)132W (Tc)
  • Supplier Device PackageTO-247
  • Product StatusActive
  • Vgs (Max)+25V, -10V
  • Vgs(th) (Max) @ Id5V @ 1.6mA
  • Rds On (Max) @ Id, Vgs65mOhm @ 20A, 18V
  • FET Feature-
  • FET TypeN-Channel

After Sales

Returning

All returns should be made within 60 days of date of invoice and be accompanied by the original invoice number, certificate of guarantee card,
parts picture and a brief explanation or test report of the reason for the return. Returns will not be accepted after 60 days. Returned merchandise must be in original packaging and in resalable
condition. Parts returned due to customer error at time of quote or sale will not be accepted. Please contact customer service for a return authorization before return shipment.

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