|
型号:1N457A TR
|
制造商:
|
描述:DIODE GEN PURP 70V 200MA DO35
|
RoHs状态:RoHS
|
|
型号:1N457A
|
制造商:
|
描述:DIODE GEN PURP 70V 200MA DO35
|
RoHs状态:RoHS
|
|
型号:1N4579AUR-1/TR
|
制造商:
|
描述:TEMPERATURE COMPENSATED
|
RoHs状态:RoHS
|
|
型号:1N4579A
|
制造商:
|
描述:TEMPERATURE COMPENSATED
|
RoHs状态:RoHS
|
|
型号:1N457A BK
|
制造商:
|
描述:DIODE GEN PURP 70V 200MA DO35
|
RoHs状态:RoHS
|
|
型号:1N457A_T50R
|
制造商:
|
描述:DIODE GEN PURP 70V 200MA DO35
|
RoHs状态:RoHS
|
|
型号:1N4579AUR-1
|
制造商:
|
描述:DIODE ZENER
|
RoHs状态:RoHS
|
|
型号:1N457A/TR
|
制造商:
|
描述:DIODE GP REV 70V 150MA DO35
|
RoHs状态:RoHS
|
|
型号:1N457AUR-1/TR
|
制造商:
|
描述:SIGNAL OR COMPUTER DIODE
|
RoHs状态:RoHS
|
|
型号:1N457A_NL
|
制造商:
|
描述:DIODE GEN PURP 70V 200MA SOD80
|
RoHs状态:RoHS
|
|
型号:1N4579A-1
|
制造商:
|
描述:DIODE ZENER 6.4V 500MW DO35
|
RoHs状态:RoHS
|
|
型号:1N457A
|
制造商:
|
描述:DIODE GEN PURP 70V 200MA DO35
|
RoHs状态:RoHS
|
|
型号:1N4579A/TR
|
制造商:
|
描述:TEMPERATURE COMPENSATED
|
RoHs状态:RoHS
|
|
型号:1N4579/TR
|
制造商:
|
描述:TEMPERATURE COMPENSATED
|
RoHs状态:RoHS
|
|
型号:1N457A
|
制造商:
|
描述:HIGH CONDUCTANCE LOW LEAKAGE DIO
|
RoHs状态:RoHS
|
|
型号:1N457ATR
|
制造商:
|
描述:DIODE GEN PURP 70V 200MA DO35
|
RoHs状态:RoHS
|
|
型号:1N4579A-1/TR
|
制造商:
|
描述:DIODE ZENER TEMP COMPENSATED
|
RoHs状态:RoHS
|
|
型号:1N457AUR/TR
|
制造商:
|
描述:SIGNAL OR COMPUTER DIODE
|
RoHs状态:RoHS
|
|
型号:1N457AUR-1
|
制造商:
|
描述:DIODE GP REV 70V 150MA DO213AA
|
RoHs状态:RoHS
|
|
型号:1N457AUR
|
制造商:
|
描述:DIODE GP REV 70V 150MA DO213AA
|
RoHs状态:RoHS
|