|
型号:BLF6G27LS-100,118
|
制造商:
|
描述:TRANS PWR LDMOS SOT502
|
RoHs状态:RoHS
|
|
型号:BLF8G10LS-270,112
|
制造商:
|
描述:RF PFET, 1-ELEMENT, ULTRA HIGH F
|
RoHs状态:RoHS
|
|
型号:A2V-16
|
制造商:
OSI Optoelectronics, Inc.
|
描述:16-ELEMENT SILICON PHOTODIODE AR
|
RoHs状态:RoHS
|
|
型号:BLP15M9S100GZ
|
制造商:
|
描述:BLP15M9S100G/SOT1483/REELDP
|
RoHs状态:RoHS
|
|
型号:BLA9G1011LS-300U
|
制造商:
|
描述:RF MOSFET LDMOS 32V SOT502B
|
RoHs状态:RoHS
|
|
型号:A2V09H400-04NR3
|
制造商:
|
描述:Airfast RF Power LDMOS Transisto
|
RoHs状态:RoHS
|
|
型号:GTRA364002FC-V1-R0
|
制造商:
|
描述:400W, GAN HEMT, 48V, 3400-3600MH
|
RoHs状态:RoHS
|
|
型号:A2V09H400-04SR3
|
制造商:
|
描述:AIRFAST RF POWER LDMOS TRANSISTO
|
RoHs状态:RoHS
|
|
型号:MRF085HR3
|
制造商:
|
描述:WIDEBAND RF POWER LDMOS TRANSIST
|
RoHs状态:RoHS
|
|
型号:A2V09H300-04NR3
|
制造商:
|
描述:AIRFAST RF POWER LDMOS TRANSISTO
|
RoHs状态:RoHS
|
|
型号:A2V-76
|
制造商:
OSI Optoelectronics, Inc.
|
描述:76-ELEMENT SILICON PHOTODIODE AR
|
RoHs状态:RoHS
|
|
型号:GTRA214602FC-V1-R0
|
制造商:
|
描述:490W, GAN HEMT, 48V, 2110-2200MH
|
RoHs状态:RoHS
|
|
型号:A2V09H525-04NR6
|
制造商:
|
描述:AIRFAST RF LDMOS WIDEBAND INTEGR
|
RoHs状态:RoHS
|
|
型号:BF5020WE6327
|
制造商:
|
描述:N-CHANNEL POWER MOSFET
|
RoHs状态:RoHS
|
|
型号:2SK3074TE12LF
|
制造商:
|
描述:MOSF RF N CH 30V 1A PW-MINI
|
RoHs状态:RoHS
|
|
型号:BLC9G20XS-400AVTY
|
制造商:
|
描述:RF MOSFET LDMOS 32V SOT1258-7
|
RoHs状态:RoHS
|
|
型号:A2V07H525-04NR6
|
制造商:
|
描述:AIRFAST RF LDMOS WIDEBAND INTEGR
|
RoHs状态:RoHS
|
|
型号:AFT09MS015NT1
|
制造商:
|
描述:RF MOSFET LDMOS 12.5V PLD1.5W
|
RoHs状态:RoHS
|
|
型号:MCH6626-TL-H
|
制造商:
|
描述:PCH+NCH 2.5V DRIVE SERIES
|
RoHs状态:RoHS
|
|
型号:A2V09H400-04NR3528
|
制造商:
|
描述:RF POWER FIELD-EFFECT TRANSISTOR
|
RoHs状态:RoHS
|