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型号:PTFA241301E V1
|
制造商:
|
描述:IC FET RF LDMOS 130W H-30260-2
|
RoHs状态:RoHS
|
|
型号:A2V07H400-04NR3
|
制造商:
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描述:AIRFAST RF POWER LDMOS TRANSISTO
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RoHs状态:RoHS
|
|
型号:BLF2425M7LS250P,11
|
制造商:
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描述:RF FET LDMOS 65V 15DB SOT539B
|
RoHs状态:RoHS
|
|
型号:A2V-16
|
制造商:
OSI Optoelectronics, Inc.
|
描述:16-ELEMENT SILICON PHOTODIODE AR
|
RoHs状态:RoHS
|
|
型号:A2V09H400-04NR3
|
制造商:
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描述:Airfast RF Power LDMOS Transisto
|
RoHs状态:RoHS
|
|
型号:CLF1G0035-200PU
|
制造商:
|
描述:RF TRANSISTOR
|
RoHs状态:RoHS
|
|
型号:WAS110M12BM2
|
制造商:
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描述:SIC, MODULE, 110A, 1200V, 62MM,
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RoHs状态:RoHS
|
|
型号:BLF7G20L-90P,118
|
制造商:
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描述:RF FET LDMOS 65V 19.5DB SOT1121A
|
RoHs状态:RoHS
|
|
型号:BF996S,215
|
制造商:
|
描述:MOSFET N-CH 20V 30MA SOT143B
|
RoHs状态:RoHS
|
|
型号:A2V07H525-04NR6
|
制造商:
|
描述:AIRFAST RF LDMOS WIDEBAND INTEGR
|
RoHs状态:RoHS
|
|
型号:A2V09H300-04NR3
|
制造商:
|
描述:AIRFAST RF POWER LDMOS TRANSISTO
|
RoHs状态:RoHS
|
|
型号:A2V-76
|
制造商:
OSI Optoelectronics, Inc.
|
描述:76-ELEMENT SILICON PHOTODIODE AR
|
RoHs状态:RoHS
|
|
型号:A2V09H525-04NR6
|
制造商:
|
描述:AIRFAST RF LDMOS WIDEBAND INTEGR
|
RoHs状态:RoHS
|
|
型号:BF1009SE6327HTSA1
|
制造商:
|
描述:MOSFET N-CH 12V 25MA SOT-143
|
RoHs状态:RoHS
|
|
型号:A2V09H400-04NR3528
|
制造商:
|
描述:RF POWER FIELD-EFFECT TRANSISTOR
|
RoHs状态:RoHS
|
|
型号:2731GN-110M
|
制造商:
|
描述:FETS RF GAN 150V 2.7-3.1GHZ 55QP
|
RoHs状态:RoHS
|
|
型号:AFT09S200W02NR3
|
制造商:
|
描述:FET RF 70V 960MHZ PLD
|
RoHs状态:RoHS
|
|
型号:BLM7G1822S-20PBG
|
制造商:
|
描述:RF FET LDMOS 65V SOT1212
|
RoHs状态:RoHS
|
|
型号:BLA8G1011LS-300GU
|
制造商:
|
描述:RF FET LDMOS 65V 16DB SOT502E
|
RoHs状态:RoHS
|
|
型号:MRF6S19140HR3
|
制造商:
|
描述:FET RF 68V 1.99GHZ NI-880
|
RoHs状态:RoHS
|