|
型号:CG2H40010F-AMP
|
制造商:
|
描述:CG2H40010F DEV BOARD WITH HEMT
|
RoHs状态:RoHS
|
|
型号:CG2H80120D-GP4
|
制造商:
|
描述:120W GAN HEMT 28V 8.0GHZ DIE, G2
|
RoHs状态:RoHS
|
|
型号:CG2H40045F-AMP
|
制造商:
|
描述:CG2H40045F DEV BOARD WITH HEMT
|
RoHs状态:RoHS
|
|
型号:CG2H40120P
|
制造商:
|
描述:120W, GAN HEMT, 28V, DC-4.0GHZ,
|
RoHs状态:RoHS
|
|
型号:CG2H40045F-TB
|
制造商:
|
描述:RF EVAL DEV KITS ISM
|
RoHs状态:RoHS
|
|
型号:CG2H80060D-GP4
|
制造商:
|
描述:RF DISCRETE
|
RoHs状态:RoHS
|
|
型号:CG2H80045D-GP4
|
制造商:
|
描述:45W, GAN HEMT, 28V, DC-8.0GHZ, B
|
RoHs状态:RoHS
|
|
型号:CG2H40045F
|
制造商:
|
描述:RF MOSFET HEMT 28V 440193
|
RoHs状态:RoHS
|
|
型号:CG2H40025F-AMP
|
制造商:
|
描述:CG2H40025F DEV BOARD WITH HEMT
|
RoHs状态:RoHS
|
|
型号:CG2H30070F-TB2
|
制造商:
|
描述:RF EVAL DEV KITS ISM
|
RoHs状态:RoHS
|
|
型号:CG2H40045P
|
制造商:
|
描述:45W, GAN HEMT, 28V, DC-4.0GHZ, P
|
RoHs状态:RoHS
|
|
型号:CG2H40035F-AMP
|
制造商:
|
描述:CG2H40035F DEVELOPMENT BOARD
|
RoHs状态:RoHS
|
|
型号:CG2H40035P
|
制造商:
|
描述:GAN HEMT 28V 35W DC-4.0GHZ PILL
|
RoHs状态:RoHS
|
|
型号:CG2H80015D-GP4
|
制造商:
|
描述:RF DISCRETE
|
RoHs状态:RoHS
|
|
型号:CG2H40120F-AMP
|
制造商:
|
描述:CG2H40120F DEV BOARD WITH HEMT
|
RoHs状态:RoHS
|
|
型号:CG2H80030D-GP4
|
制造商:
|
描述:RF MOSFET HEMT 28V DIE
|
RoHs状态:RoHS
|
|
型号:CG2H40010P
|
制造商:
|
描述:10W, GAN HEMT, 28V, DC-4.0GHZ, P
|
RoHs状态:RoHS
|
|
型号:CG2H40035F
|
制造商:
|
描述:GAN HEMT FET 28V 35W DC-4.0GHZ
|
RoHs状态:RoHS
|
|
型号:CG2H40010F
|
制造商:
|
描述:RF MOSFET HEMT 28V 440166
|
RoHs状态:RoHS
|
|
型号:CG2H40025F
|
制造商:
|
描述:RF MOSFET HEMT 28V 440166
|
RoHs状态:RoHS
|