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型号:MG10P12P2
|
制造商:
Yangjie Technology
|
描述:Transistors - IGBTs - Modules P2
|
RoHs状态:RoHS
|
|
型号:MG1038-M16
|
制造商:
|
描述:GAAS GUNN EPI DOWN HERMETIC STUD
|
RoHs状态:RoHS
|
|
型号:MG1008-42
|
制造商:
|
描述:GAAS GUNN EPI DOWN HERMETIC STUD
|
RoHs状态:RoHS
|
|
型号:MG12100D-BA1MM
|
制造商:
|
描述:IGBT MODULE 1200V 160A 1000W D3
|
RoHs状态:RoHS
|
|
型号:MG1007-42
|
制造商:
|
描述:GAAS GUNN EPI DOWN HERMETIC STUD
|
RoHs状态:RoHS
|
|
型号:MG100P12E2
|
制造商:
Yangjie Technology
|
描述:Transistors - IGBTs - Modules E2
|
RoHs状态:RoHS
|
|
型号:MG1025-M16
|
制造商:
|
描述:GAAS GUNN EPI DOWN HERMETIC STUD
|
RoHs状态:RoHS
|
|
型号:MG1056-30
|
制造商:
|
描述:GAAS GUNN EPI UP HERMETIC PILL
|
RoHs状态:RoHS
|
|
型号:MG100UZ12MRGJ
|
制造商:
Yangjie Technology
|
描述:Transistors - IGBTs - Modules GJ
|
RoHs状态:RoHS
|
|
型号:MG1021-M16
|
制造商:
|
描述:GAAS GUNN EPI DOWN HERMETIC STUD
|
RoHs状态:RoHS
|
|
型号:MG100HF12TLC1
|
制造商:
Yangjie Technology
|
描述:Transistors - IGBTs - Modules C1
|
RoHs状态:RoHS
|
|
型号:MG1010-M11
|
制造商:
|
描述:GAAS GUNN EPI DOWN HERMETIC PILL
|
RoHs状态:RoHS
|
|
型号:MG1006-M11
|
制造商:
|
描述:GAAS GUNN EPI DOWN HERMETIC PILL
|
RoHs状态:RoHS
|
|
型号:MG1006-83B
|
制造商:
|
描述:GAAS GUNN EPI DOWN HERMETIC STUD
|
RoHs状态:RoHS
|
|
型号:MG1054-30
|
制造商:
|
描述:GAAS GUNN EPI UP HERMETIC PILL
|
RoHs状态:RoHS
|
|
型号:MG10P12E1
|
制造商:
Yangjie Technology
|
描述:Transistors - IGBTs - Modules E1
|
RoHs状态:RoHS
|
|
型号:MG1052-30
|
制造商:
|
描述:GAAS GUNN EPI UP HERMETIC PILL
|
RoHs状态:RoHS
|
|
型号:MG1020-M16
|
制造商:
|
描述:GAAS GUNN EPI DOWN HERMETIC STUD
|
RoHs状态:RoHS
|
|
型号:MG100HF12LEC1
|
制造商:
Yangjie Technology
|
描述:Transistors - IGBTs - Modules C1
|
RoHs状态:RoHS
|
|
型号:MG1009-M11
|
制造商:
|
描述:GAAS GUNN EPI DOWN HERMETIC PILL
|
RoHs状态:RoHS
|