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型号:MG15P12E1
|
制造商:
Yangjie Technology
|
描述:Transistors - IGBTs - Modules E1
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RoHs状态:RoHS
|
|
型号:MG17100D-BN4MM
|
制造商:
|
描述:IGBT MODULE 1700V 150A 690W D3
|
RoHs状态:RoHS
|
|
型号:MG12600WB-BR2MM
|
制造商:
|
描述:IGBT MODULE 1200V 750A 2500W WB
|
RoHs状态:RoHS
|
|
型号:MG150P12E2
|
制造商:
Yangjie Technology
|
描述:Transistors - IGBTs - Modules E2
|
RoHs状态:RoHS
|
|
型号:MG1275S-BA1MM
|
制造商:
|
描述:IGBT MODULE 1200V 105A 630W S3
|
RoHs状态:RoHS
|
|
型号:MG1275W-XN2MM
|
制造商:
|
描述:IGBT MOD 1200V 105A 368W
|
RoHs状态:RoHS
|
|
型号:MG150HF12TLC2
|
制造商:
Yangjie Technology
|
描述:Transistors - IGBTs - Modules C2
|
RoHs状态:RoHS
|
|
型号:MG150HF12MRC2
|
制造商:
Yangjie Technology
|
描述:Transistors - IGBTs - Modules C2
|
RoHs状态:RoHS
|
|
型号:MG15P12P3
|
制造商:
Yangjie Technology
|
描述:Transistors - IGBTs - Modules P3
|
RoHs状态:RoHS
|
|
型号:MG17100S-BN4MM
|
制造商:
|
描述:IGBT MODULE 1700V 150A 620W S3
|
RoHs状态:RoHS
|
|
型号:MG1275H-XN2MM
|
制造商:
|
描述:IGBT MOD 1200V 105A 348W
|
RoHs状态:RoHS
|
|
型号:MG1275W-XBN2MM
|
制造商:
|
描述:IGBT MOD 1200V 105A 348W
|
RoHs状态:RoHS
|
|
型号:MG150TF12E2A
|
制造商:
Yangjie Technology
|
描述:Transistors - IGBTs - Modules E2
|
RoHs状态:RoHS
|
|
型号:MG150HF12TLC1
|
制造商:
Yangjie Technology
|
描述:Transistors - IGBTs - Modules C1
|
RoHs状态:RoHS
|
|
型号:MG1643-83B
|
制造商:
|
描述:GAAS GUNN EPI DOWN HERMETIC STUD
|
RoHs状态:RoHS
|
|
型号:MG1400-M16
|
制造商:
|
描述:GAAS GUNN EPI DOWN HERMETIC STUD
|
RoHs状态:RoHS
|
|
型号:MG15P12P2
|
制造商:
Yangjie Technology
|
描述:Transistors - IGBTs - Modules P2
|
RoHs状态:RoHS
|
|
型号:MG1650-M16
|
制造商:
|
描述:GAAS GUNN EPI DOWN HERMETIC STUD
|
RoHs状态:RoHS
|
|
型号:MG1657-M16
|
制造商:
|
描述:GAAS GUNN EPI DOWN HERMETIC STUD
|
RoHs状态:RoHS
|
|
型号:MG150HF12LEC2
|
制造商:
Yangjie Technology
|
描述:Transistors - IGBTs - Modules C2
|
RoHs状态:RoHS
|