|
型号:MSQ220AJC288-12
|
制造商:
MoSys, Inc.
|
描述:QPR4-12 GB/S
|
RoHs状态:RoHS
|
|
型号:MSQ220AJC288-10
|
制造商:
MoSys, Inc.
|
描述:IC RAM 512MBIT PARALLEL 288FCBGA
|
RoHs状态:RoHS
|
|
型号:FR2M
|
制造商:
|
描述:DIODE GEN PURP 1KV 2A DO214AA
|
RoHs状态:RoHS
|
|
型号:SL310A
|
制造商:
Good-Ark Semiconductor
|
描述:RECTIFIER, SCHOTTKY, 3A, 100V, D
|
RoHs状态:RoHS
|
|
型号:MSQ1PJHM3/H
|
制造商:
|
描述:DIODE GEN PURP 600V 1A MICROSMP
|
RoHs状态:RoHS
|
|
型号:MSQ1PG-M3/H
|
制造商:
|
描述:DIODE GEN PURP 400V 1A MICROSMP
|
RoHs状态:RoHS
|
|
型号:ACGRC501-G
|
制造商:
|
描述:DIODE GEN PURP 50V 5A DO214AB
|
RoHs状态:RoHS
|
|
型号:GP10G-5022M3/54
|
制造商:
|
描述:DIODE GEN PURP 400V 1A DO204AL
|
RoHs状态:RoHS
|
|
型号:1N914UR
|
制造商:
|
描述:DIODE GEN PURP 75V 200MA DO213AA
|
RoHs状态:RoHS
|
|
型号:EGP10FHE3/54
|
制造商:
|
描述:DIODE GEN PURP 300V 1A DO204AL
|
RoHs状态:RoHS
|
|
型号:VS-8TQ100STRR-M3
|
制造商:
|
描述:DIODE SCHOTTKY 100V 8A TO263AB
|
RoHs状态:RoHS
|
|
型号:MBR3560
|
制造商:
|
描述:DIODE SCHOTTKY 60V 35A DO4
|
RoHs状态:RoHS
|
|
型号:JANTX1N5550/TR
|
制造商:
|
描述:DIODE GEN PURP 200V 5A
|
RoHs状态:RoHS
|
|
型号:M0790YC200
|
制造商:
|
描述:DIODE GEN PURP 2KV 790A W2
|
RoHs状态:RoHS
|
|
型号:VS-E5TX3006THN3
|
制造商:
|
描述:DIODE GEN PURP 600V 30A TO220AC
|
RoHs状态:RoHS
|
|
型号:MSQ230AGE-2512
|
制造商:
MoSys, Inc.
|
描述:QPR8-25 GB/S
|
RoHs状态:RoHS
|
|
型号:BAS716
|
制造商:
Good-Ark Semiconductor
|
描述:DIODE, LOW LEAKAGE, 200MA, 75V,
|
RoHs状态:RoHS
|
|
型号:MSQ230AGE-1512
|
制造商:
MoSys, Inc.
|
描述:QPR8-15 GB/S
|
RoHs状态:RoHS
|
|
型号:MSQ1PGHM3/H
|
制造商:
|
描述:DIODE GEN PURP 400V 1A MICROSMP
|
RoHs状态:RoHS
|
|
型号:GP02-20-E3/54
|
制造商:
|
描述:DIODE GEN PURP 2KV 250MA DO204AL
|
RoHs状态:RoHS
|