|
型号:MSRT100140AD
|
制造商:
|
描述:DIODE GEN 1.4KV 100A 3 TOWER
|
RoHs状态:RoHS
|
|
型号:MSR830AGC-1512
|
制造商:
MoSys, Inc.
|
描述:IC SRAM 1.152GBIT PAR 676BGA
|
RoHs状态:RoHS
|
|
型号:MSRT100160AD
|
制造商:
|
描述:DIODE GEN 1.6KV 100A 3 TOWER
|
RoHs状态:RoHS
|
|
型号:MSRT100120D
|
制造商:
|
描述:1200V 100A THREE TOWER SILICON R
|
RoHs状态:RoHS
|
|
型号:MSRT100160(A)D
|
制造商:
|
描述:DIODE GEN 1.6KV 100A 3 TOWER
|
RoHs状态:RoHS
|
|
型号:MSRF860G
|
制造商:
|
描述:DIODE GEN PURP 600V 8A TO220FP
|
RoHs状态:RoHS
|
|
型号:MSRD620CT
|
制造商:
|
描述:DIODE ARRAY GP 200V 3A DPAK
|
RoHs状态:RoHS
|
|
型号:MSRD620CTT4RG
|
制造商:
|
描述:DIODE ARRAY GP 200V 3A DPAK
|
RoHs状态:RoHS
|
|
型号:MSRT100100AD
|
制造商:
|
描述:DIODE GEN 1KV 100A 3 TOWER
|
RoHs状态:RoHS
|
|
型号:MSRF1560G
|
制造商:
|
描述:DIODE GEN PURP 600V 15A TO220FP
|
RoHs状态:RoHS
|
|
型号:MSRD620CTT4G
|
制造商:
|
描述:DIODE ARRAY GP 200V 3A DPAK
|
RoHs状态:RoHS
|
|
型号:MSRT100120AD
|
制造商:
|
描述:DIODE GEN 1.2KV 100A 3 TOWER
|
RoHs状态:RoHS
|
|
型号:MSRD620CTRG
|
制造商:
|
描述:DIODE ARRAY GP 200V 3A DPAK
|
RoHs状态:RoHS
|
|
型号:MSRD620CTG
|
制造商:
|
描述:DIODE ARRAY GP 200V 3A DPAK
|
RoHs状态:RoHS
|
|
型号:MSR860G
|
制造商:
|
描述:DIODE GEN PURP 600V 8A TO220-2
|
RoHs状态:RoHS
|
|
型号:MSR860
|
制造商:
|
描述:DIODE GEN PURP 600V 8A TO220-2
|
RoHs状态:RoHS
|
|
型号:MSRT100140(A)D
|
制造商:
|
描述:DIODE GEN 1.4KV 100A 3 TOWER
|
RoHs状态:RoHS
|
|
型号:MSRT100100D
|
制造商:
|
描述:1000V 100A THREE TOWER SILICON R
|
RoHs状态:RoHS
|
|
型号:MSRT100140D
|
制造商:
|
描述:1400V 100A THREE TOWER SILICON R
|
RoHs状态:RoHS
|
|
型号:MSRT100120(A)D
|
制造商:
|
描述:DIODE GEN 1.2KV 100A 3 TOWER
|
RoHs状态:RoHS
|