|
型号:RBLQ30NL10STL
|
制造商:
|
描述:TRENCH MOS STRUCTURE, 100V, 30A,
|
RoHs状态:RoHS
|
|
型号:JAN1N6874UTK2/TR
|
制造商:
|
描述:POWER SCHOTTKY
|
RoHs状态:RoHS
|
|
型号:RBLQ20NL10CFHTL
|
制造商:
|
描述:TRENCH MOS STRUCTURE, 100V, 20A,
|
RoHs状态:RoHS
|
|
型号:BYX10GPHE3/54
|
制造商:
|
描述:DIODE GP 1.6KV 360MA DO204AL
|
RoHs状态:RoHS
|
|
型号:RBLQ20BGE10TL
|
制造商:
|
描述:TRENCH MOS STRUCTURE, 100V, 20A,
|
RoHs状态:RoHS
|
|
型号:MUR8120-BP
|
制造商:
|
描述:Interface
|
RoHs状态:RoHS
|
|
型号:RBLQ20BM10FHTL
|
制造商:
|
描述:TRENCH MOS STRUCTURE, 100V, 20A,
|
RoHs状态:RoHS
|
|
型号:RBLQ3LAM10TR
|
制造商:
|
描述:TRENCH MOS STRUCTURE, 100V, 3A,
|
RoHs状态:RoHS
|
|
型号:RBLQ30NL10SFHTL
|
制造商:
|
描述:TRENCH MOS STRUCTURE, 100V, 30A,
|
RoHs状态:RoHS
|
|
型号:SFAF2006G C0G
|
制造商:
|
描述:DIODE GEN PURP 400V 20A ITO220AC
|
RoHs状态:RoHS
|
|
型号:CDBU0140R-HF
|
制造商:
|
描述:DIODE SCHOTTKY 40V 100MA 0603C
|
RoHs状态:RoHS
|
|
型号:R6030835ESYA
|
制造商:
|
描述:DIODE GP REV 800V 350A DO205AB
|
RoHs状态:RoHS
|
|
型号:RBLQ20NL10STL
|
制造商:
|
描述:TRENCH MOS STRUCTURE, 100V, 20A,
|
RoHs状态:RoHS
|
|
型号:WNSC2D0512006Q
|
制造商:
|
描述:DIODE SIL CARB 1.2KV 5A TO220AC
|
RoHs状态:RoHS
|
|
型号:RBLQ3LAM10TFTR
|
制造商:
|
描述:DIODE SCHOTTKY 100V 3A PMDTM
|
RoHs状态:RoHS
|
|
型号:RBLQ2MM10TFTR
|
制造商:
|
描述:TRENCH MOS STRUCTURE, 100V, 2A,
|
RoHs状态:RoHS
|
|
型号:RBLQ20NL10CTL
|
制造商:
|
描述:TRENCH MOS STRUCTURE, 100V, 20A,
|
RoHs状态:RoHS
|
|
型号:RBLQ20NL10SFHTL
|
制造商:
|
描述:TRENCH MOS STRUCTURE, 100V, 20A,
|
RoHs状态:RoHS
|
|
型号:H1MFS-F1-0000HF
|
制造商:
Yangzhou Yangjie Electronic Technology Co.,Ltd
|
描述:DIODE GEN PURP 1000V 1A SMAF
|
RoHs状态:RoHS
|
|
型号:JANTXV1N6620US
|
制造商:
|
描述:DIODE GEN PURP 220V 1.2A D-5A
|
RoHs状态:RoHS
|