|
型号:RS1FLK-M3/H
|
制造商:
|
描述:DIODE GEN PURP 800V 1A DO219AB
|
RoHs状态:RoHS
|
|
型号:RS1FLG-M3/I
|
制造商:
|
描述:DIODE GEN PURP 400V 1A DO219AB
|
RoHs状态:RoHS
|
|
型号:RS1FLJ-M3/H
|
制造商:
|
描述:DIODE GEN PURP 600V 1A DO219AB
|
RoHs状态:RoHS
|
|
型号:RS1FD-M3/I
|
制造商:
|
描述:DIODE GEN PURP 200V 1A DO219AB
|
RoHs状态:RoHS
|
|
型号:RS1FLJ-M3/I
|
制造商:
|
描述:DIODE GEN PURP 600V 1A DO219AB
|
RoHs状态:RoHS
|
|
型号:RS1FD-M3/H
|
制造商:
|
描述:DIODE GEN PURP 200V 1A DO219AB
|
RoHs状态:RoHS
|
|
型号:RS1FG-M3/H
|
制造商:
|
描述:DIODE GEN PURP 400V 1A DO219AB
|
RoHs状态:RoHS
|
|
型号:RS1E320GNTB
|
制造商:
|
描述:MOSFET N-CH 30V 32A 8HSOP
|
RoHs状态:RoHS
|
|
型号:RS1FK-M3/I
|
制造商:
|
描述:DIODE GEN PURP 800V 1A DO219AB
|
RoHs状态:RoHS
|
|
型号:RS1E350GNTB
|
制造商:
|
描述:MOSFET N-CH 30V 35A/80A 8HSOP
|
RoHs状态:RoHS
|
|
型号:RS1FLD-M3/I
|
制造商:
|
描述:DIODE GEN PURP 200V 1A DO219AB
|
RoHs状态:RoHS
|
|
型号:RS1E350BNTB1
|
制造商:
|
描述:NCH 30V 80A POWER MOSFET: RS1E35
|
RoHs状态:RoHS
|
|
型号:RS1FJ-M3/H
|
制造商:
|
描述:DIODE GEN PURP 600V 1A DO219AB
|
RoHs状态:RoHS
|
|
型号:RS1E321GNTB1
|
制造商:
|
描述:MOSFET N-CH 30V 32A/80A 8HSOP
|
RoHs状态:RoHS
|
|
型号:RS1FLK-M3/I
|
制造商:
|
描述:DIODE GEN PURP 800V 1A DO219AB
|
RoHs状态:RoHS
|
|
型号:RS1E350BNTB
|
制造商:
|
描述:MOSFET N-CH 30V 35A 8HSOP
|
RoHs状态:RoHS
|
|
型号:RS1FK-M3/H
|
制造商:
|
描述:DIODE GEN PURP 800V 1A DO219AB
|
RoHs状态:RoHS
|
|
型号:RS1FLG-M3/H
|
制造商:
|
描述:DIODE GEN PURP 400V 1A DO219AB
|
RoHs状态:RoHS
|
|
型号:RS1FLD-M3/H
|
制造商:
|
描述:DIODE GEN PURP 200V 1A DO219AB
|
RoHs状态:RoHS
|
|
型号:RS1FG-M3/I
|
制造商:
|
描述:DIODE GEN PURP 400V 1A DO219AB
|
RoHs状态:RoHS
|